Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
Identifieur interne : 00A405 ( Main/Repository ); précédent : 00A404; suivant : 00A406Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
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Abstract
The ultrafast carrier dynamics in InGaN multiple-quantum-well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring technique. From the optical selection rules of TE and TM polarized light, one can selectively excite and probe different valence-subband-to-conduction-subband transitions in the MQW structure with different polarized pump and probe light. The subband structure of the MQW structure of the laser diode was calculated and is verified by electroluminescence measurement. Using this technique, ultrafast valence intersubband hole relaxation processes (τ<0.35 ps) were found to dominate the observed carrier dynamics. © 2004 American Institute of Physics.
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Denbaars</name></author><author><name sortKey="Bowers, John E" uniqKey="Bowers J">John E. Bowers</name></author></titleStmt><publicationStmt><idno type="inist">04-0242363</idno><date when="2004-06-07">2004-06-07</date><idno type="stanalyst">PASCAL 04-0242363 AIP</idno><idno type="RBID">Pascal:04-0242363</idno><idno type="wicri:Area/Main/Corpus">00B729</idno><idno type="wicri:Area/Main/Repository">00A405</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier relaxation time</term><term>Conduction bands</term><term>Electroluminescence</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Quantum well lasers</term><term>Time resolved spectra</term><term>Valence bands</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7847</term><term>7867D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Laser puits quantique</term><term>Electroluminescence</term><term>Spectre résolution temporelle</term><term>Temps relaxation porteur charge</term><term>Bande valence</term><term>Bande conduction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The ultrafast carrier dynamics in InGaN multiple-quantum-well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring technique. From the optical selection rules of TE and TM polarized light, one can selectively excite and probe different valence-subband-to-conduction-subband transitions in the MQW structure with different polarized pump and probe light. The subband structure of the MQW structure of the laser diode was calculated and is verified by electroluminescence measurement. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0242363</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The ultrafast carrier dynamics in InGaN multiple-quantum-well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring technique. From the optical selection rules of TE and TM polarized light, one can selectively excite and probe different valence-subband-to-conduction-subband transitions in the MQW structure with different polarized pump and probe light. The subband structure of the MQW structure of the laser diode was calculated and is verified by electroluminescence measurement. 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